ACE4409B datasheet(1/6 Pages) ACE

部品番号	ACE4409B

部品情報	P-Channel Enhancement Mode Field Effect Transistor

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メーカー	ACE [ACE Technology Co., LTD.]

ホームページ	http://www.ace-ele.com

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ACE4409B

P-Channel Enhancement Mode Field Effect Transistor

VER 1.2

1

Description

The ACE4409B uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate

charge. This device is suitable for use as a load switch or in PWM applications.

Features

 V

DS(V)=-30V

 I

D=-14A (VGS=-10V)

 R

DS(ON)＜11mΩ (VGS=-10V)

 R

DS(ON)＜13mΩ (VGS=-4.5V)

Absolute Maximum Ratings

Parameter

Symbol

Max

Unit

Drain-Source Voltage

VDS

-30

V

Gate-Source Voltage

VGS

±20

V

Drain Current (Continuous) * AC

TA=25

OC

ID

-14

A

TA=70

OC

-11

Drain Current (Pulse) * B

IDM

-70

Power Dissipation

TA=25

OC

PD

3

W

TA=70

OC

2.1

Operating and Storage Temperature Range

TJ,TSTG -55 to 150

OC

Packaging Type

SOP-8

Ordering information

ACE4409B XX + H

FM : SOP-8

Pb - free

Halogen - free

同様の部品番号 - ACE4409B

メーカー	部品番号	データシート	部品情報
VBsemi Electronics Co.,...	ACE4409BFM+H	1Mb / 9P	P-Channel 30-V (D-S) MOSFET
VBsemi Electronics Co.,...	ACE4409BFM-H	1Mb / 9P	P-Channel 30-V (D-S) MOSFET

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