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ACE4440B データシート(PDF) 1 Page - ACE Technology Co., LTD. |
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ACE4440B データシート(HTML) 1 Page - ACE Technology Co., LTD. |
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1 / 6 page ![]() ACE4440B N-Channel Enhancement Mode MOSFET VER 1.2 1 Description The ACE4440B uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance. Features V DS=60V I D=6A (VGS=10V) R DS(ON) <35 mΩ (V GS=10V) R DS(ON) <40 mΩ (V GS=4.5V) Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V Drain Current (Continuous) TA=25℃ ID 6 A TA=70℃ 4.8 Drain Current (Pulsed) IDM 30 A Power Dissipation TA=25℃ PD 3 W TA=70℃ 2 Operating temperature / storage temperature TJ/TSTG -55~150 ℃ Packaging Type SOP-8 Ordering information ACE4440B XX + H FM : SOP-8 Pb - free Halogen - free |
同様の部品番号 - ACE4440B |
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同様の説明 - ACE4440B |
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