ACE7401B datasheet(2/7 Pages) ACE

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ACE7401B

P-Channel Enhancement Mode Field Effect Transistor

VER 1.2

Packaging Type

DFN3*3-8L

Ordering information

ACE7401B XX + H

Electrical Characteristics

TA=25

OC unless otherwise noted

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

V(BR)DSS

VGS=0V, ID=-250uA

-30

Zero Gate Voltage Drain Current

IDSS

VDS=-30V, VGS=0V

-1

Gate Leakage Current

IGSS

VGS=±20V, VDS=0V

100

Static Drain-Source On-Resistance

RDS(ON)

VGS=-20V, ID=-10A

8.2

VGS=-10V, ID=-10A

9.2

VGS=-5V, ID=-7A

13.1

Gate Threshold Voltage

VGS(th)

VDS=VGS, IDS=-250µA

-1.5

-1.8

-3

Forward Transconductance

gFS

VDS=-5V, ID=-10A

Diode Forward Voltage

VSD

ISD=-1A, VGS=0V

-0.72

-1

Maximum Body-Diode Continuous

Current

-4.2

Switching

Total Gate Charge

VDS=-15V, ID=-12A

VGS=-10V

46.64

60.63

Gate-Source Charge

Qgs

7.84

10.2

Gate-Drain Charge

Qgd

9.96

12.95

Turn-On Delay Time

Td(on)

VDS=-15V, RL=1.25Ω,

VGS=-10V, RGEN=3Ω

19.24

38.48

Turn-On Rise Time

8.56

17.12

NN : DFN3*3-8L

Pb - free

Halogen - free

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