IXYS reserves the right to change limits, test conditions, and dimensions.

IXTA14N60P IXTP14N60P

IXTQ14N60P

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Note 1: Pulse test, t

≤ 300μs; duty cycle, d ≤ 2%.

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

Note 1

7

13

S

C

iss

2500

pF

C

oss

V

215

pF

C

rss

13

pF

t

d(on)

23

ns

t

r

27

ns

t

d(off)

70

ns

t

f

26

ns

Q

g(on)

36

nC

Q

gs

V

16

nC

Q

gd

12

nC

R

thJC

0.42

°C/W

R

thCS

(TO-220)

0.50

°C/W

(TO-3P

0.25

°C/W

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

I

S

V

14

A

I

SM

Repetitive, pulse width limited by T

JM

42

A

V

SD

I

1.5

V

t

rr

500

ns

Resistive Switching Times

V

R

I

V

TO-263 (IXTA) Outline

TO-3P (IXTQ) Outline

Pins: 1 - Gate

2 - Drain

3 - Source

4 - Drain

TO-220 (IXTP) Outline