FMBT2222A datasheet(1/3 Pages) FCI

部品番号	FMBT2222A

部品情報	FMBT2222A NPN Bipolar Transistor Epitaxial planar die construction

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メーカー	FCI [First Components International]

ホームページ	http://www.cotra.com.tw/

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1 / 3 page

MAXIMUM RATINGS* TA=25

℃ unless otherwise noted

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

75

V

VCEO

Collector-Emitter Voltage

40

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current -Continuous

600

mA

PC

Collector Dissipation

300

mW

TJ, Tstg

Junction and Storage Temperature

-55to+150

℃

ELECTRICAL

CHARACTERISTICS（Tamb=25℃

unless

otherwise

specified）

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

IC= 10μA，

IE=0

75

V

Collector-emitter breakdown voltage

V(BR)CEO

IC= 10mA， IB=0

40

V

Emitter-base breakdown voltage

V(BR)EBO

IE=10μA， IC=0

6

V

Collector cut-off current

ICBO

VCB=70 V ,

IE=0

0.1

μA

Collector cut-off current

ICEX

VCE=60V ,

VBE(off)=3V

0.1

μA

Emitter cut-off current

IEBO

VEB= 3V ,

IC=0

0.1

μA

HFE(1)

VCE=10V,

IC= 150mA

100

300

HFE(2)

VCE=10V,

IC= 0.1mA

40

DC current gain

HFE(3)

VCE=10V,

IC= 500mA

42

Collector-emitter saturation voltage

VCE(sat)

IC=500 mA, IB= 50mA

IC=150 mA, IB=15mA

0.6

0.3

V

Base-emitter saturation voltage

VBE(sat)

IC=500 mA, IB= 50mA

1.2

V

Transition frequency

fT

VCE=20V,

IC= 20mA

f=100MHz

300

MHz

Delay time

td

10

nS

Rise time

tr

VCC=30V, VBE(off)=-0.5V

IC=150mA , IB1= 15mA

25

nS

Storage time

tS

225

nS

Fall time

tf

VCC=30V, IC=150mA

IB1=-IB2=15mA

60

nS

SOT-23

MARKING: 1P

FEATURES

Epitaxial planar die construction

Complementary PNP Type available(FMMBT2907A)

1. BASE

2.EMITTER

3.COLLECTOR

FMBT2222A NPN Bipolar Transistor

Dimension in mm

Mechanical Dimensions

Description

同様の部品番号 - FMBT2222A

メーカー	部品番号	データシート	部品情報
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同様の説明 - FMBT2222A

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