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LM2735XMF/NOPB データシート(PDF) 21 Page - Texas Instruments |
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LM2735XMF/NOPB データシート(HTML) 21 Page - Texas Instruments |
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21 / 58 page ![]() D 2 x x = RDSON ¸¸ ¹ · ¨¨ © § D' IO P NFET - COND Isw-rms = IIND D 1 + 'i IIND 1 3 2 x IIND | PIND = IIN 2 x R IND-DCR D t 'i I I ( ) t sw LM2735 www.ti.com SNVS485F – JUNE 2007 – REVISED APRIL 2013 Figure 30. LM2735 Switch Current (small ripple approximation) (28) PCOND-NFET = IIN 2 x R DSON x D (29) (30) The value for should be equal to the resistance at the junction temperature you wish to analyze. As an example, at 125°C and VIN = 5V, RDSON = 250 mΩ (See typical graphs for value). Switching losses are also associated with the internal NMOS switch. They occur during the switch on and off transition periods, where voltages and currents overlap resulting in power loss. The simplest means to determine this loss is to empirically measuring the rise and fall times (10% to 90%) of the switch at the switch node: PSWR = 1/2(VOUT x IIN x FSW x TRISE) (31) PSWF = 1/2(VOUT x IIN x FSW x TFALL) (32) PSW = PSWR + PSWF (33) Copyright © 2007–2013, Texas Instruments Incorporated Submit Documentation Feedback 21 Product Folder Links: LM2735 |
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