IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,381,025

6,162,665

6,306,728 B1 6,534,343

6,683,344

one or moreof the following U.S. patents:

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,486,715

6,259,123B1 6,404,065B1 6,583,505

6,710,405B2

Fig. 11. Capacitance

100

1000

10000

0

5

10

15

20

25

30

35

40

V

Ciss

Coss

Crss

f = 1MHz

Fig. 10. Gate Charge

0

1

2

3

4

5

6

7

8

9

10

0

20

40

60

80

100 120 140 160

180

Q

Fig. 7. Input Adm ittance

0

20

40

60

80

100

120

140

160

180

3.5

4

4.5

5

5.5

6

6.5

7

7.5

8

V

25ºC

-40ºC

Fig. 8. Transconductance

0

10

20

30

40

50

60

70

80

0

30

60

90

120

150

180

I

25ºC

125ºC

Fig. 9. Source Current vs. Source-To-

Drain Voltage

0

20

40

60

80

100

120

140

160

180

200

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

V

Fig. 12. Forw ard-Bias

Safe Operating Area

1

10

100

1000

1

10

100

1000

100µs

1ms

DC

T

T

R

10ms

25µs

IXTH 75N15

IXTT 75N15