SM-8 COMPLEMENTARY MEDIUM POWER

DARLINGTON TRANSISTORS

ISSUE 1 - NOVEMBER 1995

PARTMARKING DETAIL – T6705

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

NPN

PNP

UNIT

Collector-Base Voltage

140

-140

V

Collector-Emitter Voltage

120

-120

V

Emitter-Base Voltage

10

-10

V

Peak Pulse Current

4-4

A

Continuous Collector Current

1-1

A

-55 to +150

°C

THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

VALUE

UNIT

Any single die “on”

Both die “on” equally

2.25

2.75

W

W

Derate above 25°C*

Any single die “on”

Both die “on” equally

18

22

mW/ °C

mW/ °C

Thermal Resistance - Junction to Ambient*

Any single die “on”

Both die “on” equally

55.6

45.5

°C/ W

°C/ W

* The power which can be dissipated assuming the device is mounted in a typical manner

on a PCB with copper equal to 2 inches square.

ZDT6705

SM-8

(8 LEAD SOT223)

NPN

PNP

NPN TRANSISTOR

PARAMETER

SYMBOL

MIN.

TYP.

MAX. UNIT

CONDITIONS.

Collector-Base

Breakdown Voltage

140

V

Collector-Emitter

Breakdown Voltage

120

V

Emitter-Base

Breakdown Voltage

10

V

Collector Cutoff

Current

0.01

10

µ

A

µ

A

0.1

µ

A

Colllector-Emitter

Cutoff Current

10

µ

A

Collector-Emitter

Saturation Voltage

1.0

1.5

V

V

Base-Emitter

Saturation Voltage

1.8

V

Base-Emitter

Turn-On Voltage

1.7

V

Static Forward

Current Transfer Ratio

2K

5K

2K

0.5K

100K

Transition Frequency

150

MHz

f=20MHz

Input Capacitance

90

pF

Output Capacitance

15

pF

Switching Times

0.5

µ

s

1.6

µ

s

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

For typical characteristics graphs see ZDT605 datasheet.

ZDT6705

3 - 369

3 - 370