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CSD17381F4 データシート(PDF) 1 Page - Texas Instruments |
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CSD17381F4 データシート(HTML) 1 Page - Texas Instruments |
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1 / 11 page  60 70 80 90 100 110 120 130 140 150 160 0 2 4 6 8 10 12 VGS - Gate-to- Source Voltage (V) TC = 25°C Id = 0.5A TC = 125ºC Id = 0.5A G001 D G S CSD17381F4 www.ti.com SLPS411A – APRIL 2013 – REVISED JULY 2013 30-V, N-Channel NexFET™ Power MOSFETs Check for Samples: CSD17381F4 PRODUCT SUMMARY 1 FEATURES VDS Drain to Source Voltage 30 V 2 • Ultra Low On Resistance Qg Gate Charge Total (4.5V) 1040 pC • Ultra Low Qg and Qgd Qgd Gate Charge Gate to Drain 133 pC • Low Threshold Voltage VGS = 1.8V 160 RDS(on) Drain to Source On Resistance VGS = 2.5V 110 m Ω • Ultra Small Footprint (0402 Case Size) VGS = 4.5V 90 – 1.0 mm x 0.6 mm VGS(th) Threshold Voltage 0.85 V • Ultra Low Profile – 0.35 mm Height Text Added For Spacing • Integrated ESD Protection Diode ORDERING INFORMATION Device Qty Media Package Ship – Rated > 4kV HBM 7-Inch – Rated > 2kV CDM CSD17381F4 3,000 Reel Femto(0402) 1.0mm x Tape and • Pb and Halogen Free 0.6mm SMD Lead Less Reel 13-Inch CSD17381F4R 18,000 Reel • RoHS Compliant Text Added For Spacing APPLICATIONS ABSOLUTE MAXIMUM RATINGS • Optimized for Load Switch Applications TA = 25°C unless otherwise stated VALUE UNIT • Optimized for General Purpose Switching VDS Drain to Source Voltage 30 V Applications VGS Gate to Source Voltage 12 V • Single Cell Battery Applications ID Continuous Drain Current, TA = 25°C (1) 3.1 A IDM Pulsed Drain Current, TA = 25°C (2) 10 A • Handheld and Mobile Applications PD Power Dissipation(1) 500 mW Human Body Model (HBM) 4 kV DESCRIPTION ESD Rating Charged Device Model (CDM) 2 kV The FemtoFET™ MOSFET technology has been TJ, Operating Junction and Storage designed and optimized to minimize the footprint in –55 to 150 °C TSTG Temperature Range many handheld and mobile applications. This Avalanche Energy, single pulse ID = 7.4A, technology is capable of replacing standard small EAS 2.7 mJ L = 0.1mH, RG = 25Ω signal MOSFETs while providing at least a 60% (1) Typical RθJA = 90°C/W on 1-inch 2 (6.45-cm2), 2-oz. (0.071- reduction in footprint size. mm thick) Cu pad on a 0.06-inch (1.52-mm) thick FR4 PCB. (2) Pulse duration ≤300μs, duty cycle ≤2% On Resistance vs. Gate Voltage Top View 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. 2 FemtoFET is a trademark of Texas Instruments. PRODUCTION DATA information is current as of publication date. Copyright © 2013, Texas Instruments Incorporated Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. |
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同様の説明 - CSD17381F4 |
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