TL431-DIE

SLVSC48 – JULY 2013

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This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with

appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more

susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.

BARE DIE INFORMATION

BACKSIDE

BOND PAD

BOND PAD

DIE THICKNESS

BACKSIDE FINISH

POTENTIAL

METALLIZATION COMPOSITION

THICKNESS

10.5 mils.

Silicon with backgrind

Floating

TiW/AlCu2%

1629.9 nm

Table 1. Bond Pad Coordinates in Microns

DESCRIPTION

PAD NUMBER

X MIN

Y MIN

X MAX

Y MAX

CATHODE

1

783.59

841.248

933.958

947.928

N/C

2

169.926

841.248

271.526

942.848

mountpad

3

22.86

22.86

124.46

125.222

REF

4

771.398

107.66

858.266

265.648

2

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