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TLV2711CDBV データシート(PDF) 2 Page - Texas Instruments |
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TLV2711CDBV データシート(HTML) 2 Page - Texas Instruments |
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2 / 32 page ![]() TLV2711, TLV2711Y Advanced LinCMOS RAIL-TO-RAIL MICROPOWER SINGLE OPERATIONAL AMPLIFIERS SLOS196A – AUGUST 1997 – REVISED MARCH 2001 2 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 TLV2711Y chip information This chip, when properly assembled, displays characteristics similar to the TLV2711C. Thermal compression or ultrasonic bonding may be used on the doped-aluminum bonding pads. This chip may be mounted with conductive epoxy or a gold-silicon preform. BONDING PAD ASSIGNMENTS CHIP THICKNESS: 10 MILS TYPICAL BONDING PADS: 4 × 4 MILS MINIMUM TJmax = 150°C TOLERANCES ARE ±10%. ALL DIMENSIONS ARE IN MILS. PIN (2) IS INTERNALLY CONNECTED TO BACK SIDE OF CHIP. + – OUT IN + IN – VDD + (2) (3) (4) (1) (5) VDD – / GND 46 (3) (2) (1) (5) (4) 31 |
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