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AT-41435G データシート(PDF) 2 Page - AVAGO TECHNOLOGIES LIMITED

部品番号 AT-41435G
部品情報  Up to 6 GHz Low Noise Silicon Bipolar Transistor
PDF  5 Pages
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メーカー  AVAGO [AVAGO TECHNOLOGIES LIMITED]
ホームページ  http://www.avagotech.com
Logo AVAGO - AVAGO TECHNOLOGIES LIMITED

AT-41435G データシート(HTML) 2 Page - AVAGO TECHNOLOGIES LIMITED

  AT-41435G Datasheet HTML 1Page - AVAGO TECHNOLOGIES LIMITED AT-41435G Datasheet HTML 2Page - AVAGO TECHNOLOGIES LIMITED AT-41435G Datasheet HTML 3Page - AVAGO TECHNOLOGIES LIMITED AT-41435G Datasheet HTML 4Page - AVAGO TECHNOLOGIES LIMITED AT-41435G Datasheet HTML 5Page - AVAGO TECHNOLOGIES LIMITED  
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AT-41435 Absolute Maximum Ratings
Absolute
Symbol
Parameter
Units
Maximum[1]
VEBO
Emitter-Base Voltage
V
1.5
VCBO
Collector-Base Voltage
V
20
VCEO
Collector-Emitter Voltage
V
12
IC
Collector Current
mA
60
PT
Power Dissipation[2,3]
mW
500
Tj
Junction Temperature
°C
150
TSTG
Storage Temperature[4]
°C
-65 to 150
Thermal Resistance[2,5]:
θjc = 200°C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
case = 25°C.
3. Derate at 5 mW/°C for T
c > 100°C.
4. Storage above +150°C may tarnish the leads of this package making it difficult to
solder into a circuit.
5. The small spot size of this technique results in a higher, though more accurate
determination of θjc than do alternate methods. See MEASUREMENTS section
“Thermal Resistance” for more information.
Electrical Specifications, TA = 25°C
Symbol
Parameters and Test Conditions
Units
Min.
Typ.
Max.
|S21E|2
Insertion Power Gain; VCE = 8 V, IC = 25 mA
f = 2.0 GHz
dB
11.5
f = 4.0 GHz
6.0
P1 dB
Power Output @ 1 dB Gain Compression
f = 2.0 GHz
dBm
19.0
VCE = 8 V, IC = 25 mA
f = 4.0 GHz
18.5
G1 dB
1 dB Compressed Gain; VCE = 8 V, IC = 25 mA
f = 2.0 GHz
dB
14.0
f = 4.0 GHz
9.5
NFO
Optimum Noise Figure: VCE = 8 V, IC = 10 mA
f = 1.0 GHz
dB
1.3
f = 2.0 GHz
1.7
2.0
f = 4.0 GHz
3.0
GA
Gain @ NFO; VCE = 8 V, IC = 10 mA
f = 1.0 GHz
dB
18.5
f = 2.0 GHz
13.0
14.0
f = 4.0 GHz
10.0
fT
Gain Bandwidth Product: VCE = 8 V, IC = 25 mA
GHz
8.0
hFE
Forward Current Transfer Ratio; VCE = 8 V, IC = 10 mA
—
30
150
270
ICBO
Collector Cutoff Current; VCB = 8 V
µA
0.2
IEBO
Emitter Cutoff Current; VEB = 1 V
µA
1.0
CCB
Collector Base Capacitance[1]: VCB = 8 V, f = 1 MHz
pF
0.2
Note:
1. For this test, the emitter is grounded.



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