DF005S thru DF10S

Vishay General Semiconductor

Document Number: 88573

Revision: 30-Jan-08

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

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3

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

Figure 3. Typical Forward Characteristics Per Diode

Figure 4. Typical Reverse Leakage Characteristics Per Diode

0.4

0.6

0.8

1.0

1.2

1.4

0.01

0.1

1

10

Instantaneous Forward Voltage (V)

T

Pulse Width = 300 µs

1 % Duty Cycle

0

20

40

60

80

100

0.01

0.1

1

10

100

T

T

Percent of Rated Peak Reverse Voltage (%)

Figure 5. Typical Junction Capacitance Per Diode

Figure 6. Typical Transient Thermal Impedance

1

10

100

1

10

100

Reverse Voltage (V)

T

f = 1.0 MHz

V

0.01

0.1

1

10

100

0.1

1

10

100

t - Heating Time (s)

Mounting Pad La yout

0.255 (6.5)

0.245 (6.2)

0.013 (0.330)

0.009 (0.241)

0.060 (1.524)

0.040 (1.016)

0.404 (10.3)

0.013 (0.330)

0.003 (0.076)

0.047 (1.20)

0.040 (1.02)

0.205 (5.2)

0.195 (5.0)

0.335 (8.51)

0.320 (8.13)

0.130 (3.3)

0.120 (3.05)

45°

0.386 (9.80)

Case Style DFS

0.404 MAX.

(10.26 MAX.)

0.205 (5.2)

0.195 (5.0)

0.047 MIN.

(1.20 MIN.)

0.060 MIN.

(1.52 MIN.)