93LC46/56/66

DS21712C-page 2

 2002-2012 Microchip Technology Inc.

1.0

ELECTRICAL CHARACTERISTICS

Storage temperature ...............................................................................................................................-65°C to +150°C

Ambient temperature with power applied ................................................................................................-40°C to +125°C

ESD protection on all pins

 4kV

DC C

HARACTERISTICS

† NOTICE: Stresses above those listed under “Maximum ratings” may cause permanent damage to the device. This

is a stress rating only and functional operation of the device at those or any other conditions above those indicated in

the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods

may affect device reliability.

DC CHARACTERISTICS

Param.

No.

Sym

Characteristic

Min

Typ

Max

Units

Conditions

D1

High-level input voltage

2.0

—

V

2.7V

V

2.7V

D2

Low-level input voltage

-0.3

—

0.8

V

2.7V

-0.3

—

2.7V

D3

Low-level output voltage

—

—

0.4

V

—

0.3

V

D4

High-level output voltage

2.4

—

—

V

—

—

V

D5

Input leakage current

—

—

±10

D6

Output leakage current

—

—

±10

D7

Pin capacitance

(all inputs/outputs)

——

7

pF

D8

Operating current

—

—

3

mA

(Note 2)

D9

—

—

—

—

—

100

1

500

—

mA

A

A

D10

Standby current

—

—

—

—

—

3

100

30

—

A

A

Note 1:

2:

This parameter is periodically sampled and not 100% tested.