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STM8AF6126 データシート(PDF) 56 Page - STMicroelectronics

部品番号 STM8AF6126
部品情報  Automotive 8-bit MCU, with up to 32 Kbytes Flash, data EEPROM, 10-bit ADC, timers, LIN, SPI, I2C, 3 to 5.5 V
PDF  89 Pages
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM8AF6126 データシート(HTML) 56 Page - STMicroelectronics

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Electrical characteristics
STM8AF61xx, STM8AF62xx
56/89
Doc ID 14952 Rev 6
HSE oscillator critical gm formula
The crystal characteristics have to be checked with the following formula:
g
m
g
mcrit
»
where gmcrit can be calculated with the crystal parameters as follows:
g
mcrit
2
Π
×
HSE
f
×
()
2
R
m
×
2Co
C
+
()
2
=
Rm: Notional resistance (see crystal specification)
Lm: Notional inductance (see crystal specification)
Cm: Notional capacitance (see crystal specification)
Co: Shunt capacitance (see crystal specification)
CL1 = CL2 = C: Grounded external capacitance
10.3.4
Internal clock sources and timing characteristics
Subject to general operating conditions for VDD and TA.
High speed internal RC oscillator (HSI)
Table 32.
HSI oscillator characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
fHSI
Frequency
-
16
-
MHz
ACCHS
HSI oscillator user
trimming accuracy
Trimmed by the application
for any VDD and TA
conditions
-1(1)
1.
Depending on option byte setting (OPT3 and NOPT3)
-1(1)
%
-0.5(1)
-0.5(1)
HSI oscillator accuracy
(factory calibrated)
VDD = 3.0 V ≤ VDD ≤ 5.5 V,
-40 °C
≤ TA ≤ 150 °C
-5
-
5
tsu(HSI)
HSI oscillator wakeup time
-
-
2(2)
2.
Guaranteed by characterization, not tested in production
µs



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