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CHA7215 データシート(PDF) 7 Page - United Monolithic Semiconductors |
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CHA7215 データシート(HTML) 7 Page - United Monolithic Semiconductors |
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7 / 8 page  X-band High Power Amplifier CHA7215 Ref : DSCHA72159287 - 14 Oct 09 7/8 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Bonding recommendations Port Connection External capacitor IN Inductance (Lbonding) = 0.35nH 2 gold wires with diameter of 25 µm (600µm max) OUT Inductance (Lbonding) = 0.35nH 2 gold wires with diameter of 25 µm (600µm max) Vg Inductance ≤ 1nH C1 ~ 100pF C2 ~ 10nF Vd Inductance ≤ 1nH C1 ~ 100pF Assembly recommendations in test fixture Recommended ESD management Refer to the application note AN0020 available at http://www.ums-gaas.com for ESD sensitivity and handling recommendations for the UMS products. Vg Vd C1=100pF C2=10nF Non capacitive pad Vd Vg Vg Vd C1=100pF C2=10nF Non capacitive pad Vd Vg Vg Vd C1=100pF C2=10nF Non capacitive pad Vd Vg Vg Vd C1=100pF C2=10nF Non capacitive pad Vd Vg |
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