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AXUVPS7 データシート(PDF) 1 Page - OptoDiode Corp |
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AXUVPS7 データシート(HTML) 1 Page - OptoDiode Corp |
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1 / 2 page ![]() 750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: sales@optodiode.com, Website: www.optodiode.com FEATURES • Ideal for electron detection • Circular active area • 100% internal QE ELECTRO-OPTICAL CHARACTERISTICS AT 25°C (PER ELEMENT) PARAMETERS TEST CONDITIONS MIN TYP MAX UNITS Active Area Responsivity, R Shunt Resistance, RsH Reverse Breakdown Voltage, VR Capacitance, C Rise Time THERMAL PARAMETERS STORAGE AND OPERATING TEMPERATURE RANGE Ambient1 Nitrogen or Vacuum Maximum Junction Temperature Lead soldering temperature2 -10° TO 40°C1 -20°C TO 80°C 70°C 260°C 1Temperatures exceeding these parameters may create oxide growth on the active area. Over time responsivity to low energy radiation and wavelengths below 150nm will be compromised. 20.080" from case for 10 seconds. Shipped with temporary cover to protect photodiode and wire bond. Review Opto Diode “Handling Precautions for IRD Detectors” prior to removing cover. Dimensions are in inch [metric] units. (see graphs on the next page) VR = ±10mV IR = 1µA VR = 0V VR = 2V, RL = 50 0.07 10 5 15 0.08 1.5 0.09 2 mm2 A/W MOhms Volts nF usec QUAD ELECTRON DETECTOR 15 mm2 AXUVPS7 Revision February 26, 2013 |
同様の部品番号 - AXUVPS7 |
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同様の説明 - AXUVPS7 |
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