IXYS reserves the right to change limits, test conditions, and dimensions.

IXTH130N20T

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

70

120

S

C

iss

8800

pF

C

oss

V

970

pF

C

rss

122

pF

t

d(on)

Resistive Switching, 25

°°°°°C

25

ns

t

r

V

18

ns

t

d(off)

R

57

ns

t

f

22

ns

Q

g(on)

150

nC

Q

gs

V

44

nC

Q

gd

42

nC

R

thJC

0.18

°C/W

R

thCS

0.21

°C/W

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

I

S

V

130

A

I

SM

Pulse width limited by T

JM

320

A

V

SD

I

1.0

V

t

rr

I

150

ns

V

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are

derived from data gathered during objective characterizations of preliminary engineering lots; but

also may yet contain some information supplied during a pre-production design evaluation. IXYS

reserves the right to change limits, test conditions, and dimensions without notice.

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or moreof the following U.S. patents: 4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Dim.

Millimeter

Inches

Min.

Max.

Min. Max.

A

4.7

5.3

.185

.209

A

1

2.2

2.54

.087

.102

A

2

2.2

2.6

.059

.098

b

1.0

1.4

.040

.055

b

1

1.65

2.13

.065

.084

b

2

2.87

3.12

.113

.123

C

.4

.8

.016

.031

D

20.80 21.46

.819

.845

E

15.75 16.26

.610

.640

e

5.20

5.72 0.205 0.225

L

19.81 20.32

.780

.800

L1

4.50

.177

∅P

3.55

3.65

.140

.144

Q

5.89

6.40 0.232 0.252

R

4.32

5.49

.170

.216

S

6.15 BSC

242 BSC

e

∅ P

TO-247 Outline

1

2

3

Terminals: 1 - Gate

2 - Drain

3 - Source

Tab - Drain