HANDWOUND datasheet(3/23 Pages) FREESCALE

部品番号	Handwound

部品情報	RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs

PDF	23 Pages

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メーカー	FREESCALE [Freescale Semiconductor, Inc]

ホームページ	http://www.freescale.com

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MRFE6VP61K25HR6 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5

RF Device Data

Freescale Semiconductor, Inc.

Table 4. Electrical Characteristics (TA =25C unless otherwise noted) (continued)

Characteristic

Symbol

Min

Typ

Max

Unit

Functional Tests (1) (In Freescale Test Fixture, 50 ohm system) VDD =50 Vdc, IDQ = 100 mA, Pout = 1250 W Peak (250 W Avg.),

f = 230 MHz, 100 sec Pulse Width, 20% Duty Cycle

Power Gain

Gps

23.0

24.0

26.0

Drain Efficiency

D

72.5

74.0

—

Input Return Loss

IRL

—

--14

--10

Table 5. Load Mismatch/Ruggedness (In Freescale Test Fixture, 50 ohm system) IDQ = 100 mA

Frequency

(MHz)

Signal Type

VSWR

Pout

(W)

Test Voltage, VDD

Result

230

Pulse

(100 sec, 20% Duty Cycle)

>65:1 at all

Phase Angles

1500 Peak

(3 dB Overdrive)

No Device Degradation

1. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull

wing (GS) parts.

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