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UPD166019T1F データシート(PDF) 3 Page - Renesas Technology Corp

部品番号 UPD166019T1F
部品情報  Single P-Channel High-Side Intelligent Power Device
PDF  18 Pages
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メーカー  RENESAS [Renesas Technology Corp]
ホームページ  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

UPD166019T1F データシート(HTML) 3 Page - Renesas Technology Corp

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PD166019T1F
Preliminary
R07DS0730EJ0100 Rev.1.00
Page 3 of 16
Apr 25, 2012
Absolute Maximum Ratings
(Ta = 25°C, unless otherwise specified)
Item
Symbol
Rating
Unit
Test Conditions
VCC voltage
VCC1
28
V
VCC voltage for full short
circuit protection
VCC2
18
V
VCC voltage (Load Dump)
VCC3
40
V
R1 = 1 , RL = 1.5 , td = 400 ms,
IN = low or high
Load current
(short circuit current)
IL(SC)
Self limited
A
Power Dissipation
PD
59
W
Tc = 25°C
Avalanche current
IAS
34
A
L = 100
H
Channel temperature
Tch
–40 to +150
°C
Storage temperature
Tstg
–55 to +150
°C
Electric discharge capability
(Human Body Model)
VESD
2.0
kV
AEC-Q100-022 std
R = 1.5 k
, C = 100 pF
Input voltage
VIN
0 to 28
V
IN pin, VIN  VCC, VCC reference, 1 min
Input current
IIN
–1.0
mA
IN pin
Recommended Operating Conditions
Item
Symbol
MIN.
TYP.
MAX.
Unit
Test Conditions
Power supply voltage
VCC
7
—
16
V
Tch = –40 to 150°C
Thermal Characteristics
Item
Symbol
MIN.
TYP.
MAX.
Unit
Test Conditions
Thermal resistance
Rth(ch-a)
—
45
55
°C/W
Device on 50 mm
 50 mm  1.5 mm
epoxy PCB FR4 with 6 cm
2 of 70
m
copper area



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