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AD826ARZ データシート(PDF) 3 Page - Analog Devices

部品番号 AD826ARZ
部品情報  High-Speed, Low-Power Dual Operational Amplifier
PDF  15 Pages
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メーカー  AD [Analog Devices]
ホームページ  http://www.analog.com
Logo AD - Analog Devices

AD826ARZ データシート(HTML) 3 Page - Analog Devices

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AD826
ABSOLUTE MAXIMUM RATINGS
1
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±18 V
Internal Power Dissipation
2
Plastic (N) . . . . . . . . . . . . . . . . . . . . . See Derating Curves
Small Outline (R) . . . . . . . . . . . . . . . . See Derating Curves
Input Voltage (Common Mode) . . . . . . . . . . . . . . . . . . .
±VS
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . .
±6 V
Output Short Circuit Duration . . . . . . . See Derating Curves
Storage Temperature Range (N, R) . . . . . . . –65
°C to +125°C
Operating Temperature Range . . . . . . . . . . –40
°C to +85°C
Lead Temperature Range (Soldering 10 seconds) . . . +300
°C
NOTES
1Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability .
2Specification is for device in free air: 8-lead plastic package,
θ
JA = 100
°C/watt;
8-lead SOIC package,
θ
JA = 155
°C/watt.
Parameter
Conditions
VS
Min
Typ
Max
Unit
OUTPUT CHARACTERISTICS
Output Voltage Swing
RLOAD = 500
Ω±5 V
3.3
3.8
±V
RLOAD = 150
Ω±5 V
3.2
3.6
±V
RLOAD = 1 k
Ω±15 V
13.3
13.7
±V
RLOAD = 500
Ω±15 V
12.8
13.4
±V
RLOAD = 500
0, +5 V
+1.5,
+3.5
V
Output Current
±15 V
50
mA
±5 V
50
mA
0, +5 V
30
mA
Short-Circuit Current
±15 V
90
mA
Output Resistance
Open Loop
8
MATCHING CHARACTERISTICS
Dynamic
Crosstalk
f = 5 MHz
±15 V
–80
dB
Gain Flatness Match
G = +1, f = 40 MHz
±15 V
0.2
dB
Slew Rate Match
G = –1
±15 V
10
V/
µs
DC
Input Offset Voltage Match
TMIN–TMAX
±5 V to ±15 V
0.5
2
mV
Input Bias Current Match
TMIN–TMAX
±5 V to ±15 V
0.06
0.8
µA
Open-Loop Gain Match
VO =
±10 V, RLOAD = 1 kΩ,
TMIN–TMAX
±15 V
0.15
0.01
mV/V
Common-Mode Rejection Ratio Match
VCM =
±12 V, TMIN–TMAX
±15 V
80
100
dB
Power Supply Rejection Ratio Match
±5 V to ±15 V, T
MIN –TMAX
80
100
dB
POWER SUPPLY
Operating Range
Dual Supply
±2.5
±18
V
Single Supply
+5
+36
V
Quiescent Current/Amplifier
±5 V
6.6
7.5
mA
TMIN to TMAX
±5 V
7.5
mA
±15 V
7.5
mA
TMIN to TMAX
±15 V
6.8
7.5
mA
Power Supply Rejection Ratio
VS =
±5 V to ±15 V, TMIN to TMAX
75
86
dB
NOTES
1Full power bandwidth = slew rate/2
π V
PEAK.
Specifications subject to change without notice.
ESD SUSCEPTIBILITY
ESD (electrostatic discharge) sensitive device. Electrostatic charges
as high as 4000 volts, which readily accumulate on the human
body and on test equipment, can discharge without detection.
Although the AD826 features proprietary ESD protection cir-
cuitry, permanent damage may still occur on these devices
if they are subjected to high energy electrostatic discharges.
Therefore, proper ESD precautions are recommended to avoid
any performance degradation or loss of functionality.
2.0
0
–50
90
1.5
0.5
–30
1.0
50
70
30
10
–10
80
–40
40
60
20
0
–20
AMBIENT TEMPERATURE – C
8-LEAD MINI-DIP PACKAGE
8-LEAD SOIC PACKAGE
TJ = +150 C
Maximum Power Dissipation vs. Temperature for Different
Package Types
REV. C



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