2

Symbol

Parameter

Units

Absolute Max.

Drain Voltage, RF output to ground

V

5.5

mW

605

CW RF Input Power

dBm

20

Junction Temperature

°C

150

Storage Temperature

°C

-65 to 150

Thermal Resistance

Notes:

1. Operation of this device in excess of any of

these limits may cause permanent damage.

2. Source lead temperature is 25° C. Derate 16.7

3. Thermal resistance measured using 150° C

Infra-Red Microscopy Technique.

Symbol

Parameter and Test Condition

Frequency

Units

Min.

Typ.

Max.

Quiescent Current

N/A

mA

62

73

90

NF

Noise Figure

0.45 GHz

0.9 GHz

1.5 GHz

dB

–

2.3

2.0

2.0

2.5

Gain

Gain

0.45 GHz

0.9 GHz

1.5 GHz

dB

20

21.5

21.3

20.6

23

Output Third Order Intercept Point

dBm

36.3

38.6

38.6

41.3

–

P1dB

Output Power at 1 dB Gain Compression

0.45 GHz

0.9 GHz

1.5 GHz

dBm

20.6

22.0

22.2

21.7

–

PAE

Power Added Efficiency at P1dB

0.45 GHz

0.9 GHz

1.5 GHz

%

–

41.0

41.2

38.4

–

IRL

Input Return Loss

0.45 GHz

0.9 GHz

1.5 GHz

dB

–

24.3

30.5

15.3

–

ORL

Output Return Loss

0.45 GHz

0.9 GHz

1.5 GHz

dB

–

11.4

14.7

12.1

–

ISOL

Isolation

0.45 GHz

0.9 GHz

1.5 GHz

dB

–

27.2

27.6

28.6

–

Note :

1. Measurements obtained from a test circuit described in Figure 34

2. OIP3 test condition: F1 - F2 = 10 MHz, with input power of -14 dBm per tone measured at worst case side band.