VMMK-2403 datasheet(2/11 Pages) AVAGO

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Table 1. Absolute Maximum Ratings [1]

Sym

Parameters/Condition

Unit

Absolute Max

Supply Voltage (RF Output) [2]

Device Current [2]

Pin, max

CW RF Input Power (RF Input) [3]

dBm

+20

Pdiss

Total Power Dissipation

300

Tch

Max channel temperature

°C

150

θjc

Thermal Resistance [4]

°C/W

160

Notes

1. Operation in excess of any of these conditions may result in permanent damage to this device.

2. Bias is assumed DC quiescent conditions

3. With the DC (typical bias) and RF applied to the device at board temperature Tb = 25°C

4. Thermal resistance is measured from junction to board using IR method

Table 2. DC and RF Specifications

TA = 25°C, Frequency = 3 GHz, Vd = 3V, Zin = Zout = 50Ω (unless otherwise specified)

Sym

Parameters/Condition

Unit

Minimum

Typ.

Maximum

Device Current

NF [1,2]

Noise Figure

–

1.7

2.2

Ga [1,2]

Associated Gain

OIP3 [1,2,3]

Output 3rd Order Intercept

dBm

+26

+27.8

–

P-1dB[1,2]

Output Power at 1dB

Gain Compression

dBm

+16.5

–

IRL [1,2]

Input Return Loss

–

-12

–

ORL [1,2]

Output Return Loss

–

-12

–

Notes:

1. Losses of test systems have been de-embedded from final data

2. Measure Data obtained from wafer-probing

3. OIP3 test condition: F1=3.0GHz, F2=3.01GHz, Pin=-20dBm

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