HN58C256AI Series

R10DS0218EJ0100 Rev.1.00

Page 12 of 16

Oct 07, 2013

Functional Description

Automatic Page Write

Page-mode write feature allows 1 to 64 bytes of data to be written into the EEPROM in a single write cycle. Following

the initial byte cycle, an additional 1 to 63 bytes can be written in the same manner. Each additional byte load cycle

must be started within 30

μs from the preceding falling edge of WE or CE. When CE or WE is high for 100 μs after

data input, the EEPROM enters write mode automatically and the input data are written into the EEPROM.

Data Polling

Data polling indicates the status that the EEPROM is in a write cycle or not. If EEPROM is set to read mode during a

write cycle, an inversion of the last byte of data outputs from I/O7 to indicate that the EEPROM is performing a write

operation.

WE, CE Pin Operation

During a write cycle, addresses are latched by the falling edge of

WE or CE, and data is latched by the rising edge of

WE or CE.

Write/Erase Endurance and Data Retention Time

The endurance is 10

cumulative failure rate). The data retention time is more than 10 years when a device is page-programmed less than 10

4

cycles.

Data Protection

To prevent this phenomenon, this device has a noise cancelation function that cuts noise if its width is 20 ns or less.

1. Data Protection against Noise on Control Pins (

CE, OE, WE) during Operation

During readout or standby, noise on the control pins may act as a trigger and turn the EEPROM to programming

mode by mistake. Be careful not to allow noise of a width of more than 20 ns on the control pins.

WE

CE

OE

V

0 V

V

0 V

20 ns max

IH

IH