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BSP171PL6327 データシート(PDF) 2 Page - Infineon Technologies AG |
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BSP171PL6327 データシート(HTML) 2 Page - Infineon Technologies AG |
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2 / 9 page ![]() BSP171P Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction - soldering point R thJS - - 25 K/W Thermal resistance, junction - ambient R thJA minimal footprint, steady state - - 110 6 cm 2 cooling area1), steady state -- 70 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=-250 µA -60 - - V Gate threshold voltage V GS(th) V DS=V GS, I D=-460 µA -1 -1.5 -2 Zero gate voltage drain current I DSS V DS=-60 V, V GS=0 V, T j=25 °C - -0.1 -1 µA V DS=-60 V, V GS=0 V, T j=125 °C - -10 -100 Gate-source leakage current I GSS V GS=-20 V, V DS=0 V - -10 -100 nA Drain-source on-state resistance R DS(on) V GS=-4.5 V, I D=-1.5 A - 0.3 0.45 Ω V GS=-10 V, I D=-1.9 A - 0.21 0.3 Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=-1.5 A 1.4 2.7 - S 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Values Rev 2. 6 page 2 20 12-11-26 |
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