STPSC10H065D datasheet(1/9 Pages) STMICROELECTRONICS

部品番号	STPSC10H065D

部品情報	650 V power Schottky silicon carbide diode

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メーカー	STMICROELECTRONICS [STMicroelectronics]

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This is information on a product in full production.

October 2012

Doc ID 023604 Rev 2

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STPSC10H065

650 V power Schottky silicon carbide diode

Datasheet

 production data

Features

■ No or negligible reverse recovery

■ Switching behavior independent of

temperature

■ Dedicated to PFC applications

■ High forward surge capability

Description

The SiC diode is an ultrahigh performance power

Schottky diode. It is manufactured using a silicon

carbide substrate. The wide bandgap material

allows the design of a Schottky diode structure

with a 650 V rating. Due to the Schottky

construction, no recovery is shown at turn-off and

ringing patterns are negligible. The minimal

capacitive turn-off behavior is independent of

temperature.

Especially suited for use in PFC applications, this

ST SiC diode will boost the performance in hard

switching conditions. Its high forward surge

capability ensures a good robustness during

transient phases.

Table 1.

Device summary

Symbol

Value

IF(AV)

10 A

VRRM

650 V

Tj (max)

175 °C

K

A

K

A

NC

K

A

NC

K

A

TO-220AC

STPSC10H065D

D2PAK

STPSC10H065G-TR

DPAK

STPSC10H065B-TR

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