1%

0.05 W

(Optional)

PTH04T260W

2

4

8

7

Track

VoAdj

Vo

TT

3

GND

GND

+Sense

5

L

O

A

D

−Sense

GND

+

10

Inhibit

INH/UVLO

Track

9

6

−Sense

+Sense

Vo

SYNC

1

SmartSync

100

µF

Ceramic

(Required)

150

µF

(Required)

330

µF

(Required)

(Note B)

1%

0.05 W

(Optional)

1%

0.05 W

(Required)

(Note A)

TurboTransE

UDG−06046

+

1%

0.05 W

(Optional)

PTH04T261W

2

4

8

7

Track

VoAdj

Vo

TT

3

GND

GND

+Sense

5

L

O

A

D

−Sense

GND

10

Inhibit

INH/UVLO

Track

9

6

−Sense

+Sense

Vo

SYNC

1

SmartSync

300

µF

Ceramic

(Required)

300

µF

(Required)

1%

0.05 W

(Optional)

1%

0.05 W

(Required)

(Note A)

TurboTransE

PTH04T260W, PTH04T261W

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

PTH04T260W

A.

B.

An additional 22-

µF ceramic input capacitor is recommended to reduce RMS ripple current.

PTH04T261W - Ceramic Capacitor Version

A.

B.

300 µF of ceramic or 330 µF of electrolytic input capacitance is required for proper operation.

2

Submit Documentation Feedback

Copyright © 2006–2009, Texas Instruments Incorporated

Product Folder Link(s): PTH04T260W PTH04T261W