MTP1302

3

Motorola TMOS Power MOSFET Transistor Device Data

TYPICAL ELECTRICAL CHARACTERISTICS

Figure 1. On–Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On–Resistance versus

Drain Current and Temperature

Figure 4. On–Resistance versus Drain Current

and Gate Voltage

Figure 5. On–Resistance Variation with

Temperature

Figure 6. Drain–To–Source Leakage

Current versus Voltage

1.0

0

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

5.0

10

40

ID, DRAIN CURRENT (AMPS)

0.01

–25

–50

TJ, JUNCTION TEMPERATURE (°C)

3.0

2.0

1.0

0

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

5.0

20

1000

100

10

1.0

0.1

0

0

0.4

0.8

1.2

10

20

30

50

25

10

30

15

40

2.5

1.0

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

10

0

1.5

2.0

5.0

30

45

10

ID, DRAIN CURRENT (AMPS)

0.04

0.02

0.015

0.01

0.005

0

15

20

30

TJ = 100°C

–55

°C

25

°C

TJ = 25°C

15

20

25

30

35

0.2

0.6

1.8

1.6

2.0

1.4

4.5

3.0

3.5

20

15

5.0

25

15

25

35

0.02

0.03

25

35

0.035

0.03

0.025

25

TJ = 25°C

VGS = 3.0 V

4.0 V

TJ = 125°C

25

°C

–55

°C

VGS = 10 V

10 V

VGS = 4.5 V

ID = 20 A

VGS = 10 V

VDS ≥ 10 V

TJ = 125°C

100

°C

25

°C

5.0 V

10 V

4.0

75

100

150

125

40