LM3445

www.ti.com

SNVS570L – JANUARY 2009 – REVISED MAY 2013

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

ABSOLUTE MAXIMUM RATINGS

(1) (2)

BLDR to GND

-0.3V to +17V

-0.3V to +14V

ISNS to GND

-0.3V to +2.5V

ASNS, DIM, FLTR2, COFF to GND

-0.3V to +7.0V

COFF Input Current

100mA

Internally Limited

2 kV

150°C

Storage Temperature Range

-65°C to +150°C

Maximum Lead Temperature Range (Soldering)

260°C

(1)

Absolute maximum ratings are limits beyond which damage to the device may occur. Operating Ratings are conditions for which the

device is intended to be functional, but device parameter specifications may not be guaranteed. For ensured specifications and test

conditions, see the Electrical Characteristics. All voltages are with respect to the potential at the GND pin, unless otherwise specified.

(2)

If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and

specifications.

(3)

(4)

Human Body Model, applicable std. JESD22-A114-C.

OPERATING CONDITIONS

8.0V to 12V

Junction Temperature

−40°C to +125°C

ELECTRICAL CHARACTERISTICS

Symbol

Parameter

Conditions

Min

Typ

Max

Units

BLEEDER

Bleeder resistance to GND

230

325

Ω

Operating supply current

2.00

2.85

mA

Rising threshold

7.4

7.7

V

Falling threshold

6.0

6.4

Hysterisis

1

COFF

Time out threshold

1.225

1.276

1.327

V

Off timer sinking impedance

33

60

Ω

Restart timer

180

µs

CURRENT LIMIT

ISNS limit threshold

1.174

1.269

1.364

V

Leading edge blanking time

125

ns

Current limit reset delay

180

µs

ISNS limit to GATE delay

ISNS = 0 to 1.75V step

33

ns

Copyright © 2009–2013, Texas Instruments Incorporated

Submit Documentation Feedback

3

Product Folder Links: LM3445