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MP6231DN データシート(PDF) 2 Page - Monolithic Power Systems |
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MP6231DN データシート(HTML) 2 Page - Monolithic Power Systems |
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2 / 12 page  MP6231/MP6232 –CURRENT-LIMITED POWER DISTRIBUTION SWITCHES MP6231/MP6232 Rev. 1.2 www.MonolithicPower.com 2 3/31/2010 MPS Proprietary Information. Unauthorized Photocopy and Duplication Prohibited. © 2010 MPS. All Rights Reserved. ORDERING INFORMATION Part Number Enable Switch Maximum Continuous Load Current Typical Short- Circuit Current @ TA=25C Package Top Marking Free Air Temperature (TA) MP6231DN* SOIC8E MP6231DN MP6231DH MSOP8E 6231D MP6231DS Active High SOIC8 MP6232DN SOIC8E MP6232DN MP6232DH MSOP8E 6232D MP6232DS Active Low Dual 0.5A 750mA SOIC8 -40 °C to +85°C * For Tape & Reel, add suffix –Z (e.g. MP6231DN–Z). For RoHS compliant packaging, add suffix –LF (e.g. MP6231DN–LF–Z) PACKAGE REFERENCE 1 2 3 4 8 7 6 5 TOP VIEW GND IN EN1* EN2* FLAG1 OUT1 OUT2 FLAG2 EXPOSED PAD ON BACKSIDE CONNECT TO GND MSOP8E GND IN EN1* EN2* FLAG1 OUT1 OUT2 FLAG2 1 2 3 4 8 7 6 5 TOP VIEW EXPOSED PAD ON BACKSIDE SOIC8E GND IN EN1* EN2* FLAG1 OUT1 OUT2 FLAG2 1 2 3 4 8 7 6 5 TOP VIEW SOIC8 MP6231/MP6232Dual-Channel (* EN is active high for MP6231) ABSOLUTE MAXIMUM RATINGS (1) IN .................................................-0.3V to +6.0V EN, FLAG, OUT to GND ..............-0.3V to +6.0V Continuous Power Dissipation (TA = +25°C) (2) SOIC8E...................................................... 2.5W MSOP8E.................................................. 2.27W SOIC8 ........................................................ 1.4W Junction Temperature...............................150°C Lead Temperature ....................................260°C Storage Temperature............... -65°C to +150°C Operating Junct. Temp. ........... -40°C to +125°C Thermal Resistance (3) θJA θJC SOIC8E .................................. 50 ...... 10... °C/W MSOP8E................................. 55 ...... 12... °C/W SOIC8..................................... 90 ...... 42... °C/W Notes: 1) Exceeding these ratings may damage the device. 2) The maximum allowable power dissipation is a function of the maximum junction temperature TJ (MAX), the junction-to- ambient thermal resistance θJA, and the ambient temperature TA. The maximum allowable continuous power dissipation at any ambient temperature is calculated by PD (MAX) = (TJ (MAX)-TA)/θJA. Exceeding the maximum allowable power dissipation will cause excessive die temperature, and the regulator will go into thermal shutdown. Internal thermal shutdown circuitry protects the device from permanent damage. 3) Measured on JESD51-7， 4-layer PCB. |
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