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MTSF2P03HD データシート(PDF) 4 Page - Motorola, Inc |
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MTSF2P03HD データシート(HTML) 4 Page - Motorola, Inc |
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4 / 12 page ![]() MTSF2P03HD 4 Motorola TMOS Power MOSFET Transistor Device Data TYPICAL ELECTRICAL CHARACTERISTICS 4.5 V VGS = 10 V TJ = 25°C TJ = 25°C 3.5 V 3.3 V 4.5 V 6 V VGS = 10 V 2.9 V 2.7 V 0 0 0.5 1.5 2 0 1 3 VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 3. On–Region Characteristics VGS, GATE–TO–SOURCE VOLTAGE (VOLTS) Figure 4. Transfer Characteristics 0.04 Figure 5. On–Resistance versus Gate–to–Source Voltage ID, DRAIN CURRENT (AMPS) Figure 6. On–Resistance versus Drain Current and Gate Voltage 1 100 Figure 7. On–Resistance Variation with Temperature VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 8. Drain–to–Source Leakage Current versus Voltage VDS ≥ 10 V TJ = –55°C 25 °C 100 °C 4 2 2 4 1 3.5 4 2 0.14 01 2 10 0 5 15 25 30 0.08 3 34 TJ, JUNCTION TEMPERATURE (°C) – 50 0 50 100 150 0 0.5 1.0 1.5 2.0 VGS = 10 V ID = 1.2 A 125 75 25 –25 VGS = 0 V 1 3 2.5 0.10 0.12 1000 25 °C 0.2 0.25 0.3 0.15 0.05 0.1 24 8 6 1 VGS, GATE–TO–SOURCE VOLTAGE (VOLTS) ID = 2.4 A TJ = 25°C 0 0.06 5 4.1 V 3.9 V 3.7 V 5 1.5 4.5 35 7 5 0.1 10 3.1 V 0.5 2.5 4.5 1.5 3.5 910 0 20 100 °C 125 °C |
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