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EDF1AS データシート(PDF) 1 Page - Vishay Siliconix |
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EDF1AS データシート(HTML) 1 Page - Vishay Siliconix |
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1 / 4 page ![]() EDF1AS, EDF1BS, EDF1CS, EDF1DS www.vishay.com Vishay General Semiconductor Revision: 19-Aug-13 1 Document Number: 88578 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Miniature Glass Passivated Ultrafast Surface Mount Bridge Rectifiers FEATURES • UL recognition, file number E54214 • Ideal for automated placement • Ultrafast reverse recovery time for high frequency • High surge current capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS General purpose use in AC/DC bridge full wave rectification for SMPS, lighting ballaster, adapter, battery charger, home appliances, office equipment, and telecommunication applications. MECHANICAL DATA Case: DFS Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: As marked on body Note (1) Pulse test: 300 ms pulse width, 1 % duty cycle Note (1) Pulse test: 300 ms pulse width, 1 % duty cycle PRIMARY CHARACTERISTICS Package DFS IF(AV) 1 A VRRM 50 V, 100 V, 150 V, 200 V IFSM 50 A IR 5 μA VF at IF = 1.0 A 1.05 V trr 50 ns TJ max. 150 °C Diode variations Quad ~ ~ Case Style DFS ~ ~ MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL EDF1AS EDF1BS EDF1CS EDF1DS UNIT Maximum repetitive peak reverse voltage VRRM 50 100 150 200 V Maximum RMS voltage VRMS 35 70 106 140 V Maximum DC blocking voltage VDC 50 100 150 200 V Maximum average forward output rectified current at TA = 40 °C (1) IF(AV) 1.0 A Peak forward surge current single half sine-wave superimposed on rated load IFSM 50 A Rating for fusing (t < 8.3 ms) I2t10 A2s Operating junction and storage temperature range TJ, TSTG - 55 to + 150 °C ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL EDF1AS EDF1BS EDF1CS EDF1DS UNIT Maximum instantaneous forward voltage drop per diode 1.0 A (1) VF 1.05 V Maximum DC reverse current at rated DC blocking voltage per diode TA = 25 °C IR 5.0 μA TA = 125 °C 1.0 mA Maximum reverse recovery time per diode IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 50 ns |
同様の部品番号 - EDF1AS |
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同様の説明 - EDF1AS |
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