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EDF1AS データシート(PDF) 1 Page - Vishay Siliconix

部品番号 EDF1AS
部品情報  Miniature Glass Passivated Ultrafast Surface Mount Bridge Rectifiers
PDF  4 Pages
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メーカー  VISHAY [Vishay Siliconix]
ホームページ  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

EDF1AS データシート(HTML) 1 Page - Vishay Siliconix

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EDF1AS, EDF1BS, EDF1CS, EDF1DS
www.vishay.com
Vishay General Semiconductor
Revision: 19-Aug-13
1
Document Number: 88578
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Miniature Glass Passivated Ultrafast
Surface Mount Bridge Rectifiers
FEATURES
• UL recognition, file number E54214
• Ideal for automated placement
• Ultrafast
reverse
recovery
time
for
high
frequency
• High surge current capability
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
for SMPS, lighting ballaster, adapter, battery charger, home
appliances, office equipment, and telecommunication
applications.
MECHANICAL DATA
Case: DFS
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals:
Matte
tin
plated
leads,
solderable
per
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked on body
Note
(1) Pulse test: 300 ms pulse width, 1 % duty cycle
Note
(1) Pulse test: 300 ms pulse width, 1 % duty cycle
PRIMARY CHARACTERISTICS
Package
DFS
IF(AV)
1 A
VRRM
50 V, 100 V, 150 V, 200 V
IFSM
50 A
IR
5 μA
VF at IF = 1.0 A
1.05 V
trr
50 ns
TJ max.
150 °C
Diode variations
Quad
~
~
Case Style DFS
~
~
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
EDF1AS
EDF1BS
EDF1CS
EDF1DS
UNIT
Maximum repetitive peak reverse voltage
VRRM
50
100
150
200
V
Maximum RMS voltage
VRMS
35
70
106
140
V
Maximum DC blocking voltage
VDC
50
100
150
200
V
Maximum average forward output rectified current at TA = 40 °C (1)
IF(AV)
1.0
A
Peak forward surge current single half sine-wave superimposed on
rated load
IFSM
50
A
Rating for fusing (t < 8.3 ms)
I2t10
A2s
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
EDF1AS
EDF1BS
EDF1CS
EDF1DS
UNIT
Maximum instantaneous forward
voltage drop per diode
1.0 A (1)
VF
1.05
V
Maximum DC reverse current at rated
DC blocking voltage per diode
TA = 25 °C
IR
5.0
μA
TA = 125 °C
1.0
mA
Maximum reverse recovery time per
diode
IF = 0.5 A, IR = 1.0 A, 
Irr = 0.25 A
trr
50
ns


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