ALR200 datasheet(1/1 Pages) ASI

部品番号	ALR200

部品情報	NPN SILICON RF POWER TRANSISTOR

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メーカー	ASI [Advanced Semiconductor]

ホームページ	http://www.advancedsemiconductor.com

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A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. A

7525 ETHEL AVENUE

• NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

1/1

Specifications are subject to change without notice.

CHARACTERISTICS T

C = 25

OC

SYMBOL

NONETEST CONDITIONS

MINIMUM TYPICAL MAXIMUM

UNITS

BVCBO

IC = 50 mA

70

V

BVCES

IC = 50 mA

70

V

BVEBO

IE = 30 mA

3.0

V

ICES

VCE = 40 V

30

mA

hFE

VCE = 5.0 V

IC = 500 mA

10

---

PG

ηη

C

VCC = 40 V

POUT = 200 W

f = 1.2 to 1.4

GHz

7.0

45

dB

%

NPN SILICON RF POWER TRANSISTOR

ALR200

DESCRIPTION:

The

ASI ALR200 is Designed for

FEATURES:

• Input Matching Network

•

• Omnigold™ Metalization System

MAXIMUM RATINGS

IC

16 A

VCC

40 V

PDISS

575 W @ TC = 25

OC

TJ

-65

OC to +250 OC

TSTG

-65

OC to +200 OC

θθ

JC

0.26

OC/W

PACKAGE STYLE .400 2L FLG (A)

ORDER CODE: ASI10515

MINIMUM

inches / mm

.100 / 2.54

.376 / 9.55

.050 / 1.27

.110 / 2.79

B

C

D

E

F

G

A

MAXIMUM

.120 / 3.05

.130 / 3.30

.396 / 10.06

inches / mm

.193 / 4.90

H

DIM

K

L

I

J

.490 / 12.45

.690 / 17.53

.003 / 0.08

.510 / 12.95

.710 / 18.03

.006 / 0.18

N

M

.118 / 3.00

.131 / 3.33

.135 / 3.43

.145 / 3.68

.072 / 1.83

.052 / 1.32

P

.230 / 5.84

G

C

N

2xR

4x .062 x 45°

I

E

P

M

F

L

H

J

K

2xB

D

.040 x 45°

A

.100 / 2.54

.395 / 10.03

.407 / 10.34

.890 / 22.61

.910 / 23.11

同様の部品番号 - ALR200

メーカー	部品番号	データシート	部品情報
Advanced Semiconductor	ALR200	18Kb / 1P	NPN SILICON RF POWER TRANSISTOR REV. B
Advanced Semiconductor	ALR200	18Kb / 1P	NPN SILICON RF POWER TRANSISTOR REV. B

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