ASI10686 datasheet(1/1 Pages) ASI

部品番号	ASI10686

部品情報	NPN SILICON RF POWER TRANSISTOR

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メーカー	ASI [Advanced Semiconductor]

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A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. A

7525 ETHEL AVENUE

• NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

1/1

Specifications are subject to change without notice.

CHARACTERISTICS T

C = 25

OC

SYMBOL

NONETEST CONDITIONS

MINIMUM TYPICAL MAXIMUM

UNITS

BVCBO

IC = 50 mA

65

V

BVCES

IC = 50 mA

65

V

BVCEO

IC = 50 mA

28

V

BVEBO

IE = 10 mA

3.5

V

ICES

VCE = 30 V

7.5

mA

hFE

VCE = 5.0 V

IC = 5.0 A

10

100

---

PG

ηη

C

VCE = 40 V

POUT = 300 W

f = 425 MHz

9.5

55

dB

%

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

The is Designed for

FEATURES:

• Input Matching Network

•

• Omnigold™ Metalization System

MAXIMUM RATINGS

IC

21.6 A

VCBO

65 V

VCES

65 V

VEBO

3.5 V

PDISS

875 W @ TC = 25

OC

TJ

-65

OC to +200 OC

TSTG

-65

OC to +150 OC

θθ

JC

0.2

OC/W

PACKAGE STYLE .400 BAL FLG(A)

ORDER CODE: ASI10686

MINIMUM

inches / mm

.045 / 1.14

.380 / 9.65

.125 / 3.18

.210 / 5.33

.070 / 1.78

B

C

D

E

F

G

A

MAXIMUM

.135 / 3.43

.230 / 5.84

.080 / 2.03

.390 / 9.91

inches / mm

H

.420 / 10.67

.430 / 10.92

DIM

K

L

I

J

.895 / 22.73

.058 / 1.47

.905 / 22.99

.065 / 1.65

P

N

M

.395 / 10.03

.115 / 2.92

.405 / 10.29

.130 / 3.30

.002 / 0.05

.006 / 0.15

.230 / 5.84

K

J

I

H

M

L

N

E

C

D

B

G

F

P

FULL R

A

4X.060 R

.770 / 19.56

.830 / 21.08

.215 / 5.46

.235 / 5.97

.055 / 1.40

.645 / 16.38

.655 / 16.64

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