CBSL1 datasheet(1/1 Pages) ASI

部品番号	CBSL1

部品情報	NPN SILICON RF POWER TRANSISTOR

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メーカー	ASI [Advanced Semiconductor]

ホームページ	http://www.advancedsemiconductor.com

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A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. A

7525 ETHEL AVENUE

• NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

1/1

Specifications are subject to change without notice.

CHARACTERISTICS T

C = 25

OC

SYMBOL

NONETEST CONDITIONS

MINIMUM TYPICAL MAXIMUM

UNITS

BVCBO

IC = 1 mA

40

V

BVCEO

IC = 1 mA

25

V

BVEBO

IE = 1 mA

3.5

V

ICBO

VCB = 24 V

500

µµA

hFE

VCE = 5.0 V

IC = 100 mA

20

120

---

COB

VCB = 28 V

f = 1.0 MHz

5.0

pF

PG

P1dB

VCC = 24 V

ICQ = 125 mA

f = 960 MHz

10

1.0

dB

W

NPN SILICON RF POWER TRANSISTOR

CBSL1

DESCRIPTION:

The

ASI CBSL1 is Designed for UHF

Class A Amplifier Applications in

Cellular Base Station Equipment.

FEATURES:

• Pg = 10 dB min. @ 960 MHz

• P

1dB = 1.0 Watts min. at 960 MHz

• Omnigold™ Metalization System

MAXIMUM RATINGS

IC

0.25 A

VCBO

40 V

VCEO

28 V

VEBO

3.5 V

PDISS

7.0 W @ TC = 25

OC

TJ

-65

OC to +200 OC

TSTG

-65

OC to +150 OC

θθ

JC

25

OC/W

PACKAGE STYLE .280 4L STUD

ORDER CODE: ASI10577

MINIMUM

inches / mm

.003 / 0.08

.270 / 6.86

.117 / 2.97

B

C

D

E

F

G

A

MAXIMUM

.285 / 7.24

.137 / 3.48

.007 / 0.18

inches / mm

H

.245 / 6.22

.255 / 6.48

DIM

1.010 / 25.65

1.055 / 26.80

I

J

.217 / 5.51

.220 / 5.59

K

.175 / 4.45

.285 / 7.24

.275 / 6.99

.572 / 14.53

.640 / 16.26

.130 / 3.30

.230 /5.84

G

K

H

F

E

D

C

B

45°

A

#8-32 UNC

I

J

E

B

C

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