CBSL150 datasheet(1/1 Pages) ASI

部品番号	CBSL150

部品情報	NPN SILICON RF POWER TRANSISTOR

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メーカー	ASI [Advanced Semiconductor]

ホームページ	http://www.advancedsemiconductor.com

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A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. A

7525 ETHEL AVENUE

• NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

1/1

Specifications are subject to change without notice.

CHARACTERISTICS T

C = 25

OC

SYMBOL

NONETEST CONDITIONS

MINIMUM TYPICAL MAXIMUM

UNITS

BVCEO

IC = 100 mA

26

V

BVCER

IC = 100 mA

RBE = 200

Ω

35

V

BVCES

IC = 50 mA

60

V

BVEBO

IE = 10 mA

3.5

V

ICES

VCE = 30 V

10

mA

hFE

VCE = 5.0 V

IC = 1.0 A

30

45

120

---

PG

IMD

ηη

C

VCC = 26 V

POUT = 150 W

ICQ = 2 X 150 mA

f = 960 MHz

8.0

35

-28

dB

dBc

%

ψ

VSWR = 5:1 at all phase angles

No Degradation in Output Power

NPN SILICON RF POWER TRANSISTOR

CBSL150

DESCRIPTION:

The

ASI CBSL150 is Designed for 900

MHz Class AB Cellular Base Station

Amplifiers.

FEATURES:

• Internal Input/Output Matching

• P

G = 9.0 dB Typ. at 150 W/ 900 MHz

• Omnigold™ Metalization System

MAXIMUM RATINGS

IC

25 A

VCEO

28 V

VCES

60 V

VEBO

3.5 V

PDISS

300 W @ TC = 25

OC

TJ

-65

OC to +200 OC

TSTG

-65

OC to +150 OC

θθ

JC

0.6

OC/W

PACKAGE STYLE .400 BAL FLG (C)

ORDER CODE: ASI10586

MINIMUM

inches / mm

.380 / 9.65

.120 / 3.05

.780 / 19.81

B

C

D

E

F

G

A

MAXIMUM

.130 / 3.30

.820 / 20.83

.390 / 9.91

inches / mm

1.090 / 27.69

H

DIM

K

L

I

J

.003 / 0.08

.060 / 1.52

.007 / 0.18

.070 / 1.78

.205 / 5.21

N

M

.850 / 21.59

.870 / 22.10

.220 / 5.59

.230 / 5.84

.435 / 11.05

.082 / 2.08

.100 / 2.54

.407 / 10.34

.395 / 10.03

.080x45°

A

B

F

G

H

I

J

K

L

M

(4X).060 R

.1925

D

C

E

FULL R

N

1.335 / 33.91

1.345 / 34.16

.210 / 5.33

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