MLN1027SL datasheet(1/1 Pages) ASI

部品番号	MLN1027SL

部品情報	NPN SILICON RF POWER TRANSISTOR

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メーカー	ASI [Advanced Semiconductor]

ホームページ	http://www.advancedsemiconductor.com

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A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. A

7525 ETHEL AVENUE

• NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

1/1

Specifications are subject to change without notice.

CHARACTERISTICS T

C = 25

OC

SYMBOL

NONETEST CONDITIONS

MINIMUM TYPICAL MAXIMUM

UNITS

BVCBO

IC = 1.0 mA

40

V

BVCEO

IC = 1.0 mA

28

V

BVEBO

IE = 1.0 mA

3.5

V

ICBO

VCB = 24 V

0.5

mA

hFE

VCE = 5.0 V

IC = 100 mA

20

120

---

COB

VCB = 28 V

f = 1.0 MHz

3.5

pF

PG

VCE = 20 V

ICQ = 100 mA

f = 1.0 GHz

POUT = 0.5 W

9.0

dB

NPN SILICON RF POWER TRANSISTOR

MLN1027SL

DESCRIPTION:

The

ASI MLN1027SL is Designed for

FEATURES:

•

• Omnigold™ Metalization System

MAXIMUM RATINGS

IC

0.250 A

VCBO

40 V

VCEO

28 V

VEBO

3.5 V

PDISS

7.0 W @ TC = 25

OC

TJ

-65

OC to +200 OC

TSTG

-65

OC to +150 OC

θθ

JC

25

OC/W

PACKAGE STYLE .280 4L PILL

ORDER CODE: ASI10620

MINIMUM

inches / mm

.004 / 0.10

.275 / 6.99

.050 / 1.27

B

C

D

E

F

A

MAXIMUM

.285 / 7.24

.060 . 1.52

.130 / 3.30

.006 / 0.15

inches / mm

1.055 / 26.80

DIM

.220 / 5.59

.230 / 5.84

.118 / 3.00

D

E

F

ØB

ØC

A

S

D

G

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Advanced Semiconductor	MLN1027SL	17Kb / 1P	NPN SILICON RF POWER TRANSISTOR

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