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AS1322 データシート(PDF) 4 Page - ams AG |
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AS1322 データシート(HTML) 4 Page - ams AG |
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4 / 18 page ![]() www.ams.com/DC-DC_Step-Up/AS1322 Revision 1.10 4 - 18 AS1322 Datasheet - E l e c t r i c a l C h a r a c t e r i s t i c s 6 Electrical Characteristics TAMB = -40 to +85ºC, VIN = +1.2V, VOUT = +3.3V, VSHDNN = +1.2V (unless otherwise specified). Typ values @ TAMB = +25ºC. Note: All limits are guaranteed. The parameters with min and max values are guaranteed with production tests or SQC (Statistical Quality Control) methods. Table 4. Electrical Characteristics Symbol Parameter Conditions Min Typ Max Units Minimum Start-Up Voltage ILOAD = 1mA 0.85 1 V Minimum Operating Voltage SHDNN = VIN 1 1. Minimum VIN operation after start-up is only limited by the battery’s ability to provide the necessary power as it enters a deeply dis- charged state. 0.65 0.85 V Output Voltage Adjust Range TAMB = 25ºC 2.5 5 V VFB Feedback Voltage TAMB = TMIN to TMAX 1.192 1.23 1.268 V IFB Feedback Input Current VFB = 1.25V 2 2. Specification is guaranteed by design and not 100% production tested. 1 nA IQPWS Quiescent Current (Powersave Operation) VFB = 1.4V 3 , AS1322A only 3. IQPWS is measured at VOUT. Multiply this value by VOUT/VIN to get the equivalent input (battery) current. 30 50 µA IQSHDNN Quiescent Current (Shutdown) VSHDNN = 0V 0.01 1 µA IQ Quiescent Current (Active) VFB = 1.4V 3 , AS1322B only 150 300 µA INMOSSWL NMOS Switch Leakage VSW = 5V 0.1 5 µA IPMOSSWL PMOS Switch Leakage VSW = 0V 0.1 5 µA RONNMOS NMOS Switch On Resistance VOUT = 3.3V 0.35 0.8 Ω VOUT = 5V 0.20 0.7 RONPMOS PMOS Switch On Resistance VOUT = 3.3V 0.45 0.8 Ω VOUT = 5V 0.30 0.7 INMOS NMOS Current Limit VIN = 2.5V 850 mA IPS Powersave Operation Current Threshold AS1322A only 2 3 mA Max Duty Cycle VFB = 1V, TAMB = TMIN to TMAX 80 87 % fSW Switching Frequency TAMB = 25ºC 0.95 1.2 1.5 MHz TAMB = TMIN to TMAX 0.85 1.2 1.5 VSHDNNH SHDNN Input High 1 V VSHDNNL SHDNN Input Low 0.35 V ISHDNN SHDNN Input Current VSHDNN = 5.0V 0.01 1 µA |
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