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CSD19503KCS データシート(PDF) 4 Page - Texas Instruments

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部品番号 CSD19503KCS
部品情報  80 V N-Channel NexFET Power MOSFETs
PDF  10 Pages
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メーカー  TI1 [Texas Instruments]
ホームページ  http://www.ti.com
Logo TI1 - Texas Instruments

CSD19503KCS データシート(HTML) 4 Page - Texas Instruments

  CSD19503KCS Datasheet HTML 1Page - Texas Instruments CSD19503KCS Datasheet HTML 2Page - Texas Instruments CSD19503KCS Datasheet HTML 3Page - Texas Instruments CSD19503KCS Datasheet HTML 4Page - Texas Instruments CSD19503KCS Datasheet HTML 5Page - Texas Instruments CSD19503KCS Datasheet HTML 6Page - Texas Instruments CSD19503KCS Datasheet HTML 7Page - Texas Instruments CSD19503KCS Datasheet HTML 8Page - Texas Instruments CSD19503KCS Datasheet HTML 9Page - Texas Instruments Next Button
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−75 −50 −25
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TC - Case Temperature (ºC)
VGS = 6V
VGS = 10V
ID =60A
G001
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VSD − Source-to-Drain Voltage (V)
TC = 25°C
TC = 125°C
G001
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TC - Case Temperature (ºC)
ID = 250uA
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VGS - Gate-to- Source Voltage (V)
TC = 25°C,I D = 60A
TC = 125°C,I D = 60A
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Qg - Gate Charge (nC)
ID = 60A
VDS = 40V
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VDS - Drain-to-Source Voltage (V)
Ciss = Cgd + Cgs
Coss = Cds + Cgd
Crss = Cgd
G001
CSD19503KCS
SLPS479 – DECEMBER 2013
www.ti.com
TYPICAL MOSFET CHARACTERISTICS (continued)
(TA = 25°C unless otherwise stated)
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
Figure 4. Gate Charge
Figure 5. Capacitance
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
Figure 6. Threshold Voltage vs. Temperature
Figure 7. On-State Resistance vs. Gate-to-Source Voltage
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
Figure 8. Normalized On-State Resistance vs. Temperature
Figure 9. Typical Diode Forward Voltage
4
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Copyright © 2013, Texas Instruments Incorporated
Product Folder Links: CSD19503KCS



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