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CSD19533KCS データシート(PDF) 4 Page - Texas Instruments

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部品番号 CSD19533KCS
部品情報  100 V N-Channel NexFET Power MOSFETs
PDF  10 Pages
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メーカー  TI1 [Texas Instruments]
ホームページ  http://www.ti.com
Logo TI1 - Texas Instruments

CSD19533KCS データシート(HTML) 4 Page - Texas Instruments

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−75 −50 −25
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TC - Case Temperature (ºC)
VGS = 6V
VGS = 10V
ID = 55A
G001
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VSD − Source-to-Drain Voltage (V)
TC = 25°C
TC = 125°C
G001
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TC - Case Temperature (ºC)
ID = 250uA
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VGS - Gate-to- Source Voltage (V)
TC = 25°C,I D = 55A
TC = 125°C,I D = 55A
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ID = 55A
VDS = 50V
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VDS - Drain-to-Source Voltage (V)
Ciss = Cgd + Cgs
Coss = Cds + Cgd
Crss = Cgd
G001
CSD19533KCS
SLPS482 – DECEMBER 2013
www.ti.com
TYPICAL MOSFET CHARACTERISTICS (continued)
(TA = 25°C unless otherwise stated)
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
Figure 4. Gate Charge
Figure 5. Capacitance
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
Figure 6. Threshold Voltage vs. Temperature
Figure 7. On-State Resistance vs. Gate-to-Source Voltage
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
Figure 8. Normalized On-State Resistance vs. Temperature
Figure 9. Typical Diode Forward Voltage
4
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Product Folder Links: CSD19533KCS



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