BV

R

I

Originative New Design

Superior Avalanche Rugged Technology

Robust Gate Oxide Technology

Very Low Intrinsic Capacitances

Excellent Switching Characteristics

Unrivalled Gate Charge : 7 nC (Typ.)

Extended Safe Operating Area

Lower R

100% Avalanche Tested

FEATURES

Absolute Maximum Ratings

T

unless otherwise specified

HCD6NC70S

700V N-Channel Super Junction MOSFET

Symbol

Parameter

Value

Units

V

DSS

Drain-Source Voltage

700

V

I

D

Drain Current

– Continuous (T

)

5.0

A

Drain Current

– Continuous (T

)

3.2

A

I

DM

Drain Current

– Pulsed

(Note 1)

13.0

A

V

GS

Gate-Source Voltage

Static

20

V

AC (f>1 Hz)

30

V

E

AS

Single Pulsed Avalanche Energy

(Note 2)

25

mJ

I

AR

Avalanche Current

(Note 1)

1.0

A

E

AR

Repetitive Avalanche Energy

(Note 1)

0.1

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

50

V/ns

P

D

Power Dissipation (T

)*

2.1

W

Power Dissipation (T

)

28

W

T

Operating and Storage Temperature Range

-55 to +150

T

L

Maximum lead temperature for soldering purposes,

1/8” from case for 5 seconds

300

1.Gate 2. Drain 3. Source

Dec 2013

D-PAK

2

1

3

Thermal Resistance Characteristics

Symbol

Parameter

Typ.

Max.

Units

R

JC

Junction-to-Case

--

4.4

/W

R

JA

Junction-to-Ambient*

--

60.5

T

sold

Soldering temperature, wave soldering

only allowed at leads

--

260

* When mounted on the minimum pad size recommended (PCB Mount)