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U310 データシート(PDF) 1 Page - Calogic, LLC

部品番号 U310
部品情報  N-Channel JFET High Frequency Amplifier
PDF  2 Pages
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メーカー  CALOGIC [Calogic, LLC]
ホームページ  http://www.calogic.net
Logo CALOGIC - Calogic, LLC

U310 データシート(HTML) 1 Page - Calogic, LLC

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N-Channel JFET
High Frequency Amplifier
U308 – U310
FEATURES
•• High Power Gain
•• Low Noise
•• Dynamic Range Greater The 100dB
•• Easily Matched to 75Ω Input
ABSOLUTE MAXIMUM RATINGS
(TA = 25
oC unless otherwise specified)
Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . -25V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA
Storage Temperature . . . . . . . . . . . . . . . . . . . -65
oC to +200oC
Operating Temperature Range . . . . . . . . . . . -55
oC to +150oC
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300
oC
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Derate above 25
oC . . . . . . . . . . . . . . . . . . . . . . . . 4mW/oC
NOTE: Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
ORDERING INFORMATION
Part
Package
Temperature Range
U308-10
Hermetic TO-52
-55
oC to +150oC
XU308-10
Sorted Chips in Carriers
-55
oC to +150oC
CORPORATION
PIN CONFIGURATION
D
S
(TO-52)
G, C
5021
ELECTRICAL CHARACTERISTICS (TA = 25
oC unless otherwise specified)
SYMBOL
PARAMETER
U308
U309
U310
UNITS
TEST CONDITIONS
MIN TYP MAX MIN TYP MAX MIN TYP MAX
IGSS
Gate Reverse Current
-150
-150
-150
pA
VGS = -15V
-150
-150
-150
nA
VGS = 0
TA = 125
oC
BVGSS
Gate-Source Breakdown Voltage
-25
-25
-25
V
IG = -1
µA, VDS = 0
VGS(off)
Gate-Source Cutoff Voltage
-1.0
-6.0
-1.0
-4.0
-2.5
-6.0
VDS = 10V, ID = 1nA
IDSS
Saturation Drain Current (Note 1)
12
60
12
30
24
60
mA
VDS = 10V, VGS = 0
VGS(f)
Gate-Source Forward Voltage
1.0
1.0
1.0
V
IG = 10mA, VDS = 0
gfg
Common-Gate Forward
Transconductance (Note 1)
10
17
10
17
10
17
mS
VDS = 10V,
ID = 10mA
f = 1kHz
gogs
Common Gate Output Conductance
250
250
250
µS
Cgd
Drain-Gate Capacitance
2.5
2.5
2.5
pF
VGS = -10V,
VDS = 10V
f = 1MHz
(Note 2)
Cgs
Gate-Source Capacitance
5.0
5.0
5.0
en
Equivalent Short Circuit
Input Noise Voltage
10
10
10
nV
√
Hz
VDS = 10V,
ID = 10mA
f = 100Hz
(Note 2)


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