PMST3904115 datasheet(5/9 Pages) NXP

5 / 9 page

2004 Jan 21

NXP Semiconductors

Product data sheet

NPN switching transistor

PMST3904

handbook, halfpage

MGU821

hFE

100

200

400

300

500

IC (mA)

10−1

110

102

103

(1)

(2)

(3)

Fig.2 DC current gain; typical values.

VCE = 1 V.

(1) Tamb = 150 °C.

(2) Tamb = 25 °C.

(3) Tamb = −55 °C.

Fig.3

Collector current as a function of

collector-emitter voltage.

(1) IB = 5 mA.

(2) IB = 4.5 mA.

(3) IB = 4 mA.

(4) IB = 3.5 mA.

(5) IB = 3 mA.

(6) IB = 2.5 mA.

(7) IB = 2 mA.

(8) IB = 1.5 mA.

(9) IB = 1 mA.

(10) IB = 0.5 mA.

handbook, halfpage

(mA)

VCE (V)

250

150

200

100

MGU822

(1)

(2)

(3)

(4)

(5)

(6)

(7)

(8)

(9)

(10)

Tamb = 25 °C.

handbook, halfpage

MGU823

VBE

(mV)

400

200

600

1000

800

1200

IC (mA)

10−1

110

102

103

(1)

(2)

(3)

Fig.4

Base-emitter voltage as a function of

collector current.

VCE = 1 V.

(1) Tamb = −55 °C.

(2) Tamb = 25 °C.

(3) Tamb = 150 °C.

handbook, halfpage

MGU824

VBEsat

(mV)

600

1000

400

200

800

1200

IC (mA)

10−1

110

102

103

(1)

(2)

(3)

Fig.5

Base-emitter saturation voltage as a

function of collector current.

IC/IB = 10.

(1) Tamb = −55 °C.

(2) Tamb = 25 °C.

(3) Tamb = 150 °C.

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