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SCS215AM データシート(PDF) 1 Page - Rohm |
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SCS215AM データシート(HTML) 1 Page - Rohm |
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1 / 6 page ![]() Data Sheet www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. SCS215AM SiC Schottky Barrier Diode *1 Tc=55°C *2 PW=8.3ms sinusoidal, Tj=25°C *3 PW=10ms square, Tj=25°C *4 PW=8.3ms sinusoidal, Tj=150°C *5 Tc=100°C, Tj=150°C, Duty cycle=10% *6 Tc=25°C 200* 3 A 43* 4 °C °C Tj Tstg 175 -55 to +175 Range of storage temperature lAbsolute maximum ratings (T j = 25°C) Surge no repetitive forward current Reverse voltage (repetitive peak) Reverse voltage (DC) Continuous forward current Unit Value Repetitive peak forward current Total power disspation Junction temperature VR IF IFSM IFRM PD 650 650 15* 1 34* 5 39* 6 55* 2 A A VRM Tube - Type Packaging Reel size (mm) C SCS215AM Basic ordering unit (pcs) Tape width (mm) - 50 Marking Taping code lFeatures 23nC 1) Shorter recovery time A W Symbol lConstruction Silicon carbide epitaxial planer Shottoky Diode Parameter V V A 3) High-speed switching possible lOutline lInner circuit lPackaging specifications TO-220FM 2) Reduced temperature dependence 650V 15A VR IF QC (1) (2) (1) Cathode (2) Anode (1) (2) 1/5 2014.01 - Rev.A |
同様の部品番号 - SCS215AM |
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同様の説明 - SCS215AM |
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