CMPT6427

SURFACE MOUNT

NPN SILICON

DARLINGTON TRANSISTOR

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPT6427 type

is a NPN silicon darlington transistor manufactured by

the epitaxial planar process, epoxy molded in a surface

mount package, designed for applications requiring

extremely high gain.

MARKING CODE: C1V

MAXIMUM RATINGS: (TA=25°C)

SYMBOL

UNITS

Collector-Base Voltage

VCBO

40

V

Collector-Emitter Voltage

VCEO

40

V

Emitter-Base Voltage

VEBO

12

V

Continuous Collector Current

IC

500

mA

Power Dissipation

PD

350

mW

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

Thermal Resistance

ΘJA

357

°C/W

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

ICBO

VCB=30V

50

nA

ICEO

VCE=25V

1.0

μA

IEBO

VBE=10V

50

nA

BVCBO

IC=100μA

40

V

BVCEO

IC=10mA

40

V

BVEBO

IE=10μA

12

V

VCE(SAT)

IC=50mA, IB=0.5mA

1.20

V

VCE(SAT)

IC=500mA, IB=0.5mA

1.50

V

VBE(SAT)

IC=500mA, IB=0.5mA

2.00

V

VBE(ON)

VCE=5.0V, IC=50mA

1.75

V

hFE

VCE=5.0V, IC=10mA

10K

100K

hFE

VCE=5.0V, IC=100mA

20K

200K

hFE

VCE=5.0V, IC=500mA

14K

140K

fT

VCE=5.0V, IC=10mA, f=100MHz

130

MHz

Cob

VCB=10V, IE=0, f=1.0MHz

7.0

pF

Cib

VBE=0.5V, IC=0, f=1.0MHz

15

pF

NF

VCE=5.0V, IC=1.0mA, RS=100kΩ,

f=1.0kHz to 15.7kHz

10

dB

SOT-23 CASE

R6 (1-February 2010)

www.centra lsemi.com