TIP31A TIP31B TIP31C TIP32A TIP32B TIP32C

3–3

Motorola Bipolar Power Transistor Device Data

t, TIME (ms)

1.0

0.01

0.01

0.1

1.0

1.0

100

Z

θJC(t) = r(t) RθJC

R

θJC(t) = 3.125°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) – TC = P(pk) Z

θJC(t)

P(pk)

t1

t2

SINGLE PULSE

1.0 k

D = 0.5

0.05

DUTY CYCLE, D = t1/t2

Figure 4. Thermal Response

0.1

0.05

0.03

0.02

0.07

0.5

0.3

0.2

0.7

0.02

0.05

0.2

0.5

2.0

5.0

200

500

10

20

50

0.2

0.02

0.01

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

10

20

5.0

50

100

Figure 5. Active Region Safe Operating Area

0.2

0.1

0.5

SECONDARY BREAKDOWN

LIMITED @ TJ ≤ 150°C

THERMAL LIMIT @ TC = 25°C

(SINGLE PULSE)

BONDING WIRE LIMIT

1.0 ms

100

µs

2.0

1.0

10

5.0

5.0 ms

CURVES APPLY

BELOW RATED VCEO

TIP31A, TIP32A

TIP31B, TIP32B

TIP31C, TIP32C

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

down. Safe operating area curves indicate IC – VCE limits of

the transistor that must be observed for reliable operation;

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate.

The data of Figure 5 is based on TJ(pk) = 150_C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

v 150_C. TJ(pk) may be calculated from the data in Fig-

ure 4. At high case temperatures, thermal limitations will re-

duce the power that can be handled to values less than the

limitations imposed by second breakdown.

0.05

0.1

0.2

0.7

0.03

0.3

0.5

0.07

IC, COLLECTOR CURRENT (AMP)

Figure 6. Turn–Off Time

3.0

2.0

1.0

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

1.0

2.0

3.0

0.2

0.5

1.0

5.0

0.1

2.0 3.0

0.3

VR, REVERSE VOLTAGE (VOLTS)

Figure 7. Capacitance

300

200

100

70

50

30

10

20

40

30

tf @ VCC = 30 V

tf @ VCC = 10 V

ts′

IB1 = IB2

IC/IB = 10

ts′ = ts – 1/8 tf

TJ = 25°C

TJ = + 25°C

Ceb

Ccb