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2SA1013L-R-AB3-R データシート(PDF) 2 Page - Unisonic Technologies

部品番号 2SA1013L-R-AB3-R
部品情報  PNP EPITAXIAL SILICON TRANSISTOR
PDF  3 Pages
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メーカー  UTC [Unisonic Technologies]
ホームページ  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

2SA1013L-R-AB3-R データシート(HTML) 2 Page - Unisonic Technologies

  2SA1013L-R-AB3-R Datasheet HTML 1Page - Unisonic Technologies 2SA1013L-R-AB3-R Datasheet HTML 2Page - Unisonic Technologies 2SA1013L-R-AB3-R Datasheet HTML 3Page - Unisonic Technologies  
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2SA1013
PNP EPITAXIAL SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R208-049.B
ABSOLUTE MAXIMUM RATINGS (T
A=25
°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-160
V
Collector-Emitter Voltage
VCEO
-160
V
Emitter-Base Voltage
VEBO
-6
V
Collector Current
IC
-1
A
Base Current
IB
-0.5
A
Collector Power Dissipation
SOT-89
PC
500
W
TO-92/TO-92NL
900
W
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55 ~150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (T
A =25
°C)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNIT
Collector Cut-Off Current
ICBO
VCB=-150V, IE=0
-1.0
µA
Emitter Cut-Off Current
IEBO
VEB=-6V, IC=0
-1.0
µA
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC=-10mA, IB=0
-160
V
DC Current Gain
hFE
VCE=-5V, IC=-200mA
60
320
Collector-Emitter Saturation Voltage
VCE(sat)
IC=-500mA, IB=-50mA
-1.5
V
Base-Emitter Voltage
VBE
VCE=-5V, IC=-5mA
-0.45
-0.75
V
Transition Frequency
fT
VCE=-5V, IC=-200mA
15
50
MHz
Collector Output Capacitance
Cob
VCB=-10V, f=1MHz, IE=0
35
pF
CLASSIFICATION OF hFE
RANK
R
O
P
RANGE
60~120
100~200
160~320



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