2SK545

Preliminary

JFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R216-102.a

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

40

V

Gate-Drain Voltage

-40

V

Gate Current

10

mA

Drain Current

1

mA

Power Dissipation

125

mW

Junction Temperature

150

°C

Storage Temperature

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

Gate-to-Drain Breakdown Voltage

-40

V

Gate-to-Source Leakage Current

-500

pA

Zero-Gate Voltage Drain Current

30

300

µA

Cutoff Voltage

-1.5

-4.0

V

Forward Transfer Admittance

|yfs|

0.05 0.13

mS

Input Capacitance

1.7

pF

Reverse Transfer Capacitance

0.7

pF

RANK

B10

B11

B12

RANGE

30~80

60~180

150~300