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MN2510L-R-T3P-T データシート(PDF) 2 Page - Unisonic Technologies |
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MN2510L-R-T3P-T データシート(HTML) 2 Page - Unisonic Technologies |
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2 / 3 page ![]() MN2510 Preliminary NPN EPITAXIAL SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw QW-R214-020.a ABSOLUTE MAXIMUM RATINGS (T A=25 °C) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage VCEO 100 V Emitter-Base Voltage VEBO 6 V Collector Current IC 25 A Base Current IB 5 A Collector Power Dissipation (TC=25 °C) Pc 125 W Junction Temperature TJ 150 °C Storage Temperature TSTG -55 ~150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (T A =25 °C) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector Cut-Off Current ICBO VCB=100V 10 µA Emitter Cut-Off Current IEBO VEB=6V 10 µA Collector-Emitter Voltage V(BR)CEO IC=50mA 100 V DC Current Gain (Note 1) hFE VCE=4V, IC=12A 40 120 Collector-Emitter Saturation Voltage VCE(sat) IC=12A, IB=1.2A 1.5 V Base- Emitter Saturation Voltage VBE(ON) VCE=4V, IC=12A 1.8 V Cut-Off Frequency fT VCE=12V, IE=-1A 20 MHz Output Capacitance Cob VCB=10V, IE=0A, f=1MHz 200 pF CLASSIFICATION OF hFE RANK R O hFE1 40~80 60~120 |
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