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MP2510G-R-T3P-T データシート(PDF) 2 Page - Unisonic Technologies

部品番号 MP2510G-R-T3P-T
部品情報  PNP TRANSISTOR
PDF  3 Pages
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メーカー  UTC [Unisonic Technologies]
ホームページ  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

MP2510G-R-T3P-T データシート(HTML) 2 Page - Unisonic Technologies

  MP2510G-R-T3P-T Datasheet HTML 1Page - Unisonic Technologies MP2510G-R-T3P-T Datasheet HTML 2Page - Unisonic Technologies MP2510G-R-T3P-T Datasheet HTML 3Page - Unisonic Technologies  
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MP2510
Preliminary
PNP EPITAXIAL SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R214-021.a
ABSOLUTE MAXIMUM RATINGS (T
A=25
°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-100
V
Collector-Emitter Voltage
VCEO
-100
V
Emitter-Base Voltage
VEBO
-6
V
Collector Current
IC
-25
A
Base Current
IB
-5
A
Collector Power Dissipation (TC=25
°C)
Pc
125
W
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55~150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (T
A =25
°C)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector Cut-Off Current
ICBO
VCB=100V
-10
µA
Emitter Cut-Off Current
IEBO
VEB=6V
-10
µA
Collector-Emitter Voltage
V(BR)CEO
IC=50mA
-100
V
DC Current Gain (Note 1)
hFE
VCE=4V, IC=12A
40
120
Collector-Emitter Saturation Voltage
VCE(sat)
IC=12A, IB=1.2A
-1.5
V
Base- Emitter Saturation Voltage
VBE(ON)
VCE=4V, IC=12A
-1.8
V
Cut-Off Frequency
fT
VCE=12V, IE=-1A
20
MHz
Output Capacitance
Cob
VCB=10V, IE=0A, f=1MHz
200
pF
CLASSIFICATION OF hFE
RANK
R
O
hFE1
40~80
60~120



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